2025-03-18226 Pages3680 USD
GaN on SiC epitaxy (Epi) wafers are semiconductor materials used in the production of high-frequency and high-power electronic devices such as RF amplifiers, radar systems, and 5G infrastructure. These wafers consist of a layer of gallium nitride (GaN) grown on a silicon carbide (SiC) substrate, offering superior performance in terms of power handling, thermal conductivity, and efficiency compared to traditional silicon-based semiconductors. The unique properties of GaN on SiC Epi wafers make them ideal for applications requiring high-frequency operation and high power density, driving their demand in the market.
The market for GaN on SiC Epi wafers is experiencing significant growth due to the increasing adoption of 5G technology, the proliferation of Internet of Things (IoT) devices, an